View SST174-E3_8320896.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

j/sst174/175/176/177 series vishay siliconix document number: 70257 s-04030?rev. e, 04-jun-01 www.vishay.com 9-1 p-channel jfets j174 sst174 j175 sst175 j176 sst176 j177 sst177
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/sst174 5 to 10 85 ?10 25 j/sst175 3 to 6 125 ?10 25 j/sst176 1 to 4 250 ?10 25 j/sst177 0.8 to 2.25 300 ?10 25 low on-resistance: j174 <85 fast switching?t on : 25 ns low leakage: ?10 pa low capacitance: 5 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error,? excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the j/sst174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. this series simplifies series-shunt switching applications when combined with the siliconix j/sst111 series. the to-226aa (to-92) plastic package provides a low-cost option, while the to-236 (sot-23) package provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). d s g to-236 (sot-23) top view 2 3 1 to-226aa (to-92) top view d s g 1 2 3 *marking code for to-236 sst174 (s4)* sst175 (s5)* sst176 (s6)* sst177 (s7)* j174 j175 j176 j177 for applications information see an104.
j/sst174/175/176/177 series vishay siliconix www.vishay.com 9-2 document number: 70257 s-04030 ? rev. e, 04-jun-01

gate-drain voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate-source voltage 30 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current ? 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c limits j/sst174 j/sst175 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 45 30 30 gate-source cutoff voltage v gs(off) v ds = ? 15 v, i d = ? 10 na 5 10 3 6 v saturation drain current b i dss v ds = ? 15 v, v gs = 0 v ? 20 ? 135 ? 7 ? 70 ma v gs = 20 v, v ds = 0 v 0.01 1 1 gate reverse current i gss t a = 125 c 5 gate operating current i g v dg = ? 15 v, i d = ? 1 ma 0.01 na v ds = ? 15 v, v gs = 10 v ? 0.01 ? 1 ? 1 drain cutoff current i d(off) t a = 125 c ? 5 drain-source on-resistance r ds(on) v gs = 0 v, v ds = ? 0.1 v 85 125 gate-source forward voltage v gs(f) i g = ? 1 ma , v ds = 0 v ? 0.7 v dynamic common-source forward transconductance g fs v ds = ? 15 v, i d = ? 1 ma 4.5 ms common-source output conductance g os v ds = ? 15 v, i d = ? 1 ma f = 1 khz 20 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 85 125 common-source input capacitance c iss v ds = 0 v, v gs = 0 v, f = 1 mhz 20 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = 10 v f = 1 mhz 5 pf equivalent input noise voltage e n v dg = ? 10 v, i d = ? 1 ma f = 1 khz 20 nv ? hz switching t d(on) 10 turn-on time t r v gs(l) = 0 v, v gs(h) = 10 v 15 t d(off) gs(l) gs(h) see switching circuit 10 ns turn-off time t f 20 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. pscia b. pulse test: pw 300 s duty cycle 3%.
j/sst174/175/176/177 series vishay siliconix document number: 70257 s-04030 ? rev. e, 04-jun-01 www.vishay.com 9-3 ! limits j/sst176 j/sst177 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = 1 a , v ds = 0 v 45 30 30 gate-source cutoff voltage v gs(off) v ds = ? 15 v, i d = ? 10 na 1 4 0.8 2.25 v saturation drain current b i dss v ds = ? 15 v, v gs = 0 v ? 2 ? 35 ? 1.5 ? 20 ma v gs = 20 v, v ds = 0 v 0.01 1 1 gate reverse current i gss t a = 125 c 5 gate operating current i g v dg = ? 15 v, i d = ? 1 ma 0.01 na v ds = ? 15 v, v gs = 10 v ? 0.01 ? 1 ? 1 drain cutoff current i d(off) t a = 125 c ? 5 drain-source on-resistance r ds(on) v gs = 0 v, v ds = ? 0.1 v 250 300 gate-source forward voltage v gs(f) i g = ? 1 ma , v ds = 0 v ? 0.7 v dynamic common-source forward transconductance g fs v ds = ? 15 v, i d = ? 1 ma 4.5 ms common-source output conductance g os f = 1 khz 20 s drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 250 300 common-source input capacitance c iss v ds = 0 v, v gs = 0 v, f = 1 mhz 20 common-source reverse transfer capacitance c rss v ds = 0 v, v gs = 10 v f = 1 mhz 5 pf equivalent input noise voltage e n v dg = ? 10 v, i d = ? 1 ma f = 1 khz 20 nv ? hz switching t d(on) 10 turn-on time t r v gs(l) = 0 v, v gs(h) = 10 v 15 t d(off) gs(l) gs(h) see switching circuit 10 ns turn-off time t f 20 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. pscia b. pulse test: pw 300 s duty cycle 3%.
j/sst174/175/176/177 series vishay siliconix www.vishay.com 9-4 document number: 70257 s-04030 ? rev. e, 04-jun-01 200 06810 4 2 160 0 ? 100 ? 80 ? 60 ? 40 ? 20 0 on-resistance and drain current vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) r ds @ i d = ? 1 ma, v gs = 0 v i dss @ v ds = ? 15 v, v gs = 0 v i dss r ds 120 80 40 18 0 15 12 9 6 3 6810 2 250 200 150 100 50 0 forward transconductance and output conductance vs. gate-source cutoff voltage v gs(off) ? gate-source cutoff voltage (v) g fs and g os @ v ds = ? 15 v v gs = 0 v, f = 1 khz g fs g os 4 output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.0 v 0.5 v 1.5 v 2.0 v ? 25 0 ? 12 ? 16 ? 20 ? 20 ? 15 ? 10 ? 5 0 ? 8 ? 4 v gs(off) = 3 v v gs = 0 v output characteristics ? drain current (ma) i d v ds ? drain-source voltage (v) 1.5 v 2.0 v ? 2 0 ? 0.3 ? 0.4 ? 0.5 ? 1.6 ? 1.2 ? 0.8 ? 0.4 0 ? 0.2 ? 0.1 v gs(off) = 3 v v gs = 0 v 250 200 150 100 50 0 ? 1 ? 10 ? 100 on-resistance vs. drain current i d ? drain current (ma) t a = 25 c v gs(off) = 1.5 v 3 v 5 v 300 ? 55 25 125 0 ? 15 85 on-resistance vs. temperature t a ? temperature ( c) v gs(off) = 1.5 v 3 v 5 v i d = ? 1 ma r ds changes x 0.7%/ c 240 180 120 60 ? 35 5 45 65 105 1.0 v 0.5 v s) g os ? output conductance ( r ds(on) ? drain-source on-resistance ( ? ) i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? )
j/sst174/175/176/177 series vishay siliconix document number: 70257 s-04030 ? rev. e, 04-jun-01 www.vishay.com 9-5 20 0 ? 9 ? 12 ? 6 ? 3 ? 15 16 12 8 4 0 turn-on switching turn-off switching v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) t r approximately independent of i d v dd = ? 10 v, r g = 220 v gs(h) = 10 v, v gs(l) = 0 v t on @ i d = ? 10 ma t d(off) v gs(off) = 1.5 v t f v gs(off) = 1.5 v t on @ i d = ? 5 ma v dd = ? 10 v, v gs(h) = 10 v, v gs(l) = 0 v 50 05 40 20 10 0 30 1234 t r @ i d = ? 5 ma 5 v 5 v switching time (ns) switching time (ns) capacitance vs. gate-source voltage gate leakage current capacitance (pf) v gs ? gate-source voltage (v) v dg ? drain-gate voltage (v) v ds = 0 v f = 1 mhz c iss c rss 10 na 100 pa 100 na 1 na ? gate leakage i g 10 pa 1 pa 0.1 pa 30 01216 820 24 12 6 0 0 ? 40 ? 20 ? 10 ? 50 18 4 ? 30 10 100 1 k 100 k 10 k 100 10 1 transfer characteristics noise voltage vs. frequency f ? frequency (hz) t a = ? 55 c 125 c v ds = ? 10 v i d = ? 0.1 ma ? 1 ma ? drain current (ma) i d v gs ? gate-source voltage (v) ? 40 0345 ? 32 ? 16 ? 8 0 ? 24 12 t a = 125 c t a = 25 c ? 10 ma i gss @ 125 c i gss @ 25 c ? 10 ma v ds = ? 15 v v gs(off) = 3 v 25 c ? 1 ma i d = ? 1 ma e n ? noise voltage nv / hz
7.5 k 51 1.2 k 51 51 1.2 k 0.1 f sampling scope v gg v dd r g v gs(h) v gs(l) r l j/sst174/175/176/177 series vishay siliconix www.vishay.com 9-6 document number: 70257 s-04030 ? rev. e, 04-jun-01
174 175 176 177 v dd ? 10 v ? 6 v ? 6 v ? 6 v v gg 20 v 12 v 8 v 5 v r l * 560 750 1800 5600 r g * 100 220 390 390 i d(on) ? 15 ma ? 7 ma ? 3 ma ? 1 ma *non-inductive
rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf see typical characteristics curves for changes.
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

▲Up To Search▲

Price & Availability of SST174-E3

	To Download SST174-E3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .